5.25GHz CMOS Power Amplifier Design and Research on Monolithic Balun

• Main Authors: Yao-Hong Liou, 劉耀鴻
• Other Authors: Christina F. Jou
• Format: Others
• Language: zh-TW
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/11044585518318043171

碩士 === 國立交通大學 === 電信工程系 === 90 === Abstraction Recently, with the promising developing of wireless communication and the improvement of semi-conductor technology, to integrate all communication system (including base-band and RF) becomes a trend. This thesis will present 5GHz RF Power Amplifier and Driver Amplifier which are designed by 0.25um CMOS mixed mode technology. Matching network of Power Amplifier and Driver Amplifier are integrated in IC by on-chip lump elements, such as Spiral inductor and MIM capacitor. RF Power Amplifier is operated in Class A mode, and is designed with Power Matching to achieve maximum Output Power and Efficiency; Driver Amplifier is designed with Gain Matching to increase Power Handling capability and System Gain. The measured results of Power Amplifier agree with simulative results: Power Gain=5.66dB, Output P1dB=13.76dBm, PAE@P1dB=13%, OIP3=24dBm; Power Gain of Driver Amplifier at 5.25GHz is 5dB, Output P1dB is 6.7dB. To design a RFIC that operating frequency is over 5GHz needs passive component with high self resonate frequency. This thesis will discuss the simulative results and measured results of Spiral inductor testkey, which including three different widths (7um, 10um, 15um respectively) and double-layer inductor. In measured results, double-layer inductor has both high self-resonate-frequency and Q factor. Besides, Balun(Balance-to-Unbalance), which uses as an adaptor between Differential and Single-ended circuit (LNA and Antenna respectively), can be implemented by inter-wound Spiral Inductor. The measured results show that, although this Balun structure has nearly 180 degree phase-difference (173~183 degree), the most disadvantage is the low coupling factor (-7dB) owing to the lossy Si substrate.