Study of Strain-Affected Single-layer InGaN Quantum Wells in GaN using X-ray Diffraction and Photoluminescence Spectra
碩士 === 國立交通大學 === 電子物理系 === 90 === Photoluminescence (PL) and X-ray Diffraction (XRD) Spectra of strained single layer InGaN films sandwiched by GaN were performed to study the stain variation in layers of different thickness. The film thickness of InxGa1-xN grown with MOCVD varied from 4...
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| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/80043621529116753294 |