RF CMOS Substrate Modeling in Spice

碩士 === 國立交通大學 === 電子工程系 === 90 === As the gate length of a MOSFET reduces, its high-frequency characteristics can be greatly improved. However, its model becomes more complicate. Especially, the effect of substrate coupling is getting more serious. An advanced RF model by considering subs...

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Bibliographic Details
Main Authors: Shiuyi Lin, 林旭益
Other Authors: Steve S. Chung
Format: Others
Language:zh-TW
Published: 2002
Online Access:http://ndltd.ncl.edu.tw/handle/68488091649686976995