Fabrication and Characterization of SOI nMOSFETs for RF Applications
碩士 === 國立交通大學 === 電子工程系 === 90 === Recently silicon-on-insulator (SOI) technology has been considered as the mainstream technology of the future for ULSI circuits. However, in the RF field, different gate structure may influence RF characteristics of the MOS transistors and kink effect re...
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| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/82708904600661397067 |