Sphere Model and Breakdown Physics in Ultrathin Gate Oxides
碩士 === 國立交通大學 === 電子工程系 === 90 === The dielectric breakdown of ultrathin gate oxides in metal-oxide-semiconductor field-effect-transistors (MOSFETs) is an important reliability issue in ULSI (Ultra Large Scale Integration) technology. A consistent model for intrinsic time-depen...
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| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/66188117991915201493 |
| Summary: | 碩士 === 國立交通大學 === 電子工程系 === 90 === The dielectric breakdown of ultrathin gate oxides in metal-oxide-semiconductor field-effect-transistors (MOSFETs) is an important reliability issue in ULSI (Ultra Large Scale Integration) technology.
A consistent model for intrinsic time-dependent dielectric breakdown (TDDB) of thin oxide is introduced. This model links the existing anode hole injection model and the trap generation statistical model together and describes wearout as a hole induced generation of electron traps. Breakdown in thin oxide is defined as conduction via these traps from one interface to the other, as soon as a critical density of neutral electron traps in the oxide is reached. We will show that neutral electron trap density saturates to a constant for gate oxide thickness less than 2.5nm as well as predict the oxide thickness dependence of QBD distribution.
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