Investigation of metal/ferroelectric/metal/insulator/semiconductor Structure's Process and Properties
碩士 === 國立交通大學 === 電子工程系 === 90 === At the present time, the commercial 1T1C(1 transistor 1 capacitor) ferroelectric memory is a destructive readout. Our experiments here directly investigate the process conditions and characteristics of non-destructive structure. A sequence of parameter s...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95885108760816896967 |