| Summary: | 碩士 === 國立交通大學 === 物理研究所 === 90 === A procedure is By conventional point of view, the prominent carriers in cuprates are holes. However, Nagaosa and Lee claimed that the residual resistivity was in the form of r0µnimp/p in the underdoped regime and r0µnimp/(1-p)in the overdoped regime for Zn-doped cuprates with the Kondo screening effect in the spin-charge separation context. Here nimp is the Zn impurity concentration and p the hole concentration. If this case is true, a novel change of the electronic structure would happen from underdoped to overdoped regime. To verify this important puzzle, we focus our study on the electric transport properties of Y0.7Ca0.3Ba2(Cu1-xZnx) 3O7-y. The key point is to fix a Zn impruity concentration while the carrier concentration in the sample is changed. In contrast with Nagaosa and Lee’s conclusions, we discovered that r0µnimp/p when carrier concentration is changed from overdoped to underdoped. Our experimental suggest the invalidity of the scenario proposed by Nagaosa and Lee.
|
|---|
