Wafer Bonding Process for High Brightness LEDs

• Main Authors: Chih-Yuan Hou, 侯智元
• Other Authors: Yewchung Sermon Wu
• Format: Others
• Language: en_US
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/29953218214780488042

碩士 === 國立交通大學 === 材料科學與工程系 === 90 === Wafer Bonding Process for High Brightness LEDs Student: Chih-Yuan Hou Advisor: Yewchung Sermon Wu Department of Material Science and Engineering National Chiao Tung University Abstract The (AlxGa1-x)0.5In0.5P /GaP transparent substrate (TS) light emitting diode (LED) was fabricated by wafer bonding technique. In this study, used indium-tin-oxide (ITO) ( In2O3: SnO2 = 90 wt%: 10 wt% ) thin film as an intermediate layer to do indirect wafer bonding. The Indium-Tin-Oxide (ITO) thin film(~2800Å) exhibit high transmission in the visible region(about 90%), high electrical conductivity(2×10-4 W cm) . In this experiment, bonded n-InGaP/ITO to investigate the bonded interface, the indium-tin-oxide (ITO) thin film was deposited on n-GaAs substrate by electron-beam evaporation, the InGaP was also grown on n-GaAs substrate by metalorganic chemical vapor deposition (MOCVD).The pair of n-InGaP/ITO, bonded in Ar ambient or vacuum at 550 and 600℃ for 40 minutes, the bonded interface have been characterized by scanning electron microscopy (SEM) and IR transmission optical microscopy system. The current-voltage (I-V) characteristics have demonstrated to be result of different bonding temperature, ambient and different wafer clean method. In addition, it will demonstrate the feasibility of Indium Tin Oxide (ITO) used as an intermediate layer applying to wafer bonded transparent substrate light emitting diode.