| Summary: | 碩士 === 國立交通大學 === 材料科學與工程系 === 90 === SBT and PTO, and PZT ferroelectric thin films were prepared by matelorganic and sol-gel method in this study. The physical and electrical properties of the dielectric films, sandwiched in a MIM structure with [110] oriented SRO or BRO as bottom electrode and Pt as top electrode, are investigated. The thicknesses of these thin films were about 2500Å. The crystal structure and surface morphology were analyzed by X-Ray and SEM measurement. Interface strain energy and electricity properties of these MIM structures were measured and their correlations were studied.
X-Ray diffraction shows that SRO and BRO bottom electrode did not induce the SBT thin film growth in one direction. However, BRO bottom electrodes leaded to growth PZT ferroelectric thin film in (110) prefer direction.TEM lattice image showed an expitaxial relation between BRO and PZT at their interface. For typical PTO and PbZr0.2Ti0.8O3 films, the SEM images showed that the grain size and the roughness of PTO and PbZr0.2Ti0.8O3 were large than PZT(MPB).Therefore, the leakge current density of PTO and PbZr0.2Ti0.8O3 was larger than PZT(MPB).
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