Diffusion of Metallic Impurities in Lithographical Processes：Theory and Experimental Data Analysis
碩士 === 國立成功大學 === 機械工程學系碩博士班 === 90 === Abstract The increasing complexity and miniaturization of modern integrated circuits (ICs) demand a higher device yield, and hence lower defect density in the active region of silicon devices. For a deep-sub-micrometer device, a single metal precipitate coul...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/7j92tg |