Bond Orbital Model with Microscopic Interface Effect and its Application to Semiconductor Nanostructures
博士 === 國立成功大學 === 電機工程學系碩博士班 === 90 === Abstract The bond orbital model (BOM) is a very powerful method for theoretical calculating on the semiconductors and their heterostructures. This method is a link of the tight-binding and k•p method, while it combines the merit above two methods. The BOM co...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2002
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Online Access: | http://ndltd.ncl.edu.tw/handle/bvhx62 |