Structural and Optical Characterization of Te-doped II-VI Compound Semiconductors Grown by Molecular Beam Epitaxy and Application on Metal-Semiconductor-Metal Photodetectors and Mixed-color Light Emitting Diodes
博士 === 國立成功大學 === 電機工程學系碩博士班 === 90 === In this dissertation, a high quality ZnSe buffer layer was grown onto the etched GaAs substrate by molecular beam epitaxy (MBE) while the etched substrate surface having a (4×1) reconstructed pattern during deoxidization. It was found that the orders of period...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2002
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/zx9v6z |