| Summary: | 碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 90 === Abstract
Since the realization of the first ZnSe-based lasers in 1991 the development of blue emitting laser diodes has been the objective of II-VI heterostructure research. While several groups have achieved cw-operation of ZnSe-based devices at room temperature, the lifetime of such devices still remains a lot of problem to improve.
In ours experiment, we focus the annealing effect on ZnCdSe/ZnSe and ZnSe/GaAs interfaces first. We investigated the thermally induced interdiffusion in ZnCdSe/ZnSe quantum wells with the different number of wells and the outdiffusion of Ga atoms from the GaAs substrate by PL spectra. The quantum well structures grown by molecular beam expitaxy were thermally annealed at temperatures between 250℃ to 650℃. According to this result, we proposed the ZnSCdSe quantum well to improve the thermal stability and the Cd diffusion was suppressed. Than we study the optical property of the Ten-cluster Effects of ZnSSeTe. We found that the optical properties were improved by heavy Te doping, the peak intensity becomes much stronger and shift to lower energy. Applying to this Ten cluster effect, we use ZnCdSeTe as an active layer material which not only improves the optical of the quantum wells but also has the better thermal stability. Finally, a LED device applying the results in quantum wells is achieved and optical properties of LED were studies.
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