Electrodeposition of Indium Antimonide inAir and Water-Stable Room TemperatureIonic Liquid

• Main Authors: Ming-Huan Yang, 楊明桓
• Other Authors: I-Wen Sun
• Format: Others
• Language: zh-TW
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/uw9n6r

碩士 === 國立成功大學 === 化學系碩博士班 === 90 === 　　The electrodeposition of indium and antimony on polycrystalline tungsten, and neckel and on glassy carbon was investigated in the basic 1-ethyl-3-methylimidazolium chloride tetrafluroborate. In(Ⅲ) chloride and Sb(Ⅲ) chloride were complexed as [InCl5]2-and [SbCl4]- in this melts. In(Ⅲ) and Sb(Ⅲ) could be reduced to their elemental state via the quasi-reversible reduction. Analysis of the dimensionless chronoamperometric current-time transients indicated that the electrodeposition of indium on glassy carbon and tungsten involved instantaneous three-dimensional nucleation with diffusion-controlled growth, On the other hand antimony on these electrodes involved progressive three-dimensional nucleation. 　　Indium antimonide could be deposited in basic EMI-Cl-BF4 ionic liquid. The deposition potential, temperature, and concentrations of In(Ⅲ) and Sb(Ⅲ) were the important factors affecting the deposition results. The content of indium in the deposites increased as the deposition potential became more negative. Under the diffusion limited condition, the ratio of the In/Sb in the deposites were relatively constant and was close to the concentration ratio of In(Ⅲ) to Sb(Ⅲ) in the deposition solution. XRD showed that crystalline InSb could be obtained within a deposition temperature range between 30oC~120oC. 　　IR and photocurrent measurements showed that InSb codeposites were P-type semiconductor The flatband potential and the band gap were –0.87V, 0.17eV, respectively.