Applications of p-type High Work Function Transparent Conductive Anode on Organic Light-Emitting Diode
碩士 === 國立成功大學 === 化學工程學系碩博士班 === 90 === Abstract Transparent conductive p-type nickel oxide (NiO) films were prepared by r.f. sputtering. The resistivity of 1.7×10-1Ω-cm was obtained for the non-intentionally doped NiO films prepared at a substrate temperature of 200℃ in pure oxygen sputtering gas (...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70948655710873404114 |
| Summary: | 碩士 === 國立成功大學 === 化學工程學系碩博士班 === 90 === Abstract
Transparent conductive p-type nickel oxide (NiO) films were prepared by r.f. sputtering. The resistivity of 1.7×10-1Ω-cm was obtained for the non-intentionally doped NiO films prepared at a substrate temperature of 200℃ in pure oxygen sputtering gas (total pressure：10 mtorr，target ENI power：150 W). An average transmittance of about 40% in the visible range (400nm~800nm) was obtained for a 114nm thick NiO film.
An ultra-thin layer of nickel oxide (NiO) was deposited on indium-tin oxide (ITO) as the anode of the organic light emitting diode (OLED) device because of its high work function and thus good hole injection ability. A lower turn-on voltage was about 3V resulting in a luminance of 1 cd/m2. However, slightly lower luminescence efficiency was observed for the device with the ITO/NiO anode. The devices consisting of a TPD layer only are the hole-only devices, which confirmed the enhancement of hole injection ability usung ITO/NiO.
Our results suggest that ITO/NiO anode is a good material for hole injections in OLED devices. The NiO material layer deposited on ITO indeed improves the turn-on voltage of the OLED devices.
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