The High Speed Measurement of Partial Area Image Applied to Photo Etched and Lithography Element

• Main Authors: Shi-Sxiang Chan, 詹世祥
• Other Authors: Chern-Sheng Lin
• Format: Others
• Language: zh-TW
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/r5p3yt

碩士 === 逢甲大學 === 自動控制工程所 === 90 === Photolithography technology is applied in many fields, such as semiconductor industry, integrated circuit (IC), liquid crystal display (LCD) and micro electro mechanical systems (MEMS), etc. In all the parameters what effect photolithography, the most important are exposure and development time which effect the coating photoresist characters. This study does the further researches the relationship between exposure and development time using a high speed image inspection system, and the relationship between development time and photoresist depth using Scanning Probe Microscope (SPM). A partial scan CCD camera and high speed frame capture card was used to obtain the photoresist development processing parameters using photolithography manufacturing process procedures. The experimental results verified that this image system provides an economical and effective method for producing a micro photo etched product. In addition, the study does some research of laser etching. Expect this experiments can also offer some good references for industrial circles.