Polarization-dependent photoluminescence studies of InGaN/GaN multiple quantum wells

• Main Authors: Meng-Lin Chang, 張孟琳
• Other Authors: Ji-Lin Shen
• Format: Others
• Language: zh-TW
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/80004060830366945008

碩士 === 中原大學 === 應用物理研究所 === 90 === In this thesis, we present the optical properties of InGaN/GaN quantum wells. The polarization-dependent and temperature-dependent photoluminescence were used to study the character of InGaN/GaN multi-quantum wells. The subject are divided into two parts. The first part, the studies of n-GaN was carried out by the polarization-dependent and temperature-dependent photoluminescence measurements. For the temperature dependent measurement, Varshni relation and O’Donnell formula can be used to fit the band edge photoluminescence in GaN. For the polarization-dependent measurements, we observed a striking phenomenon, in which the yellow luminescence is strongly polarized. The possible origin will be discussed. Our result can be used to distinguish the mechanism of yellow luminescence. The second part, we used the same techniques to study the InGaN/GaN multiple quantum wells. At the room temperature, we can distinguish the heavy hole and light hole from the polarized photoluminescence spectrum. On the other hand, the obvious localization effect can be observed by varying temperature.