| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 90 === The major objective of this thesis is to fabricate and study passive devices using standard monolithic silicon processing technology. The study includes inductors, capacitors and VCO. Finally, these devices are applied in a VCO oscillator circuit. The design simulation and measurement of related devices are also presented in this thesis.
High frequency passing devices are indispensable in today’s communication circuit. It is also our goal to study their potential applications in the thesis. Inductors have several characteristics in high frequency range such as skin effect, parasitic effect and resonant frequency. Although capacitors have no severe degradation in items of these effects, they still show certain degree of dielectric loss in high frequency range. During simulation, we also consider these parasitic effects to improve accuracy of simulation.
All characteristic impedance measurements were performed in HP8720C network analyzer. These analyses are mainly focused on quality factor, inductance and capacitance. Finally, these devices are used to fabricate VCO oscillators. And the integration of active and passive devices into a single IC chip will be discussed.
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