感應耦合電漿反應離子蝕刻(ICP-RIE)氮化鎵系列材料之研究
碩士 === 國防大學中正理工學院 === 兵器系統工程研究所 === 90 === Abstract In a variety of dry-etching techniques for gallium nitride (GaN) material, the inductively coupled plasma (ICP) etching process was considered to be the most effective process in the commercialized blue light emitting diodes (LED)....
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/92234160716664871836 |