感應耦合電漿反應離子蝕刻(ICP-RIE)氮化鎵系列材料之研究

• Main Author: 彭超群
• Other Authors: 劉道恕
• Format: Others
• Language: zh-TW
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/92234160716664871836

碩士 === 國防大學中正理工學院 === 兵器系統工程研究所 === 90 === Abstract In a variety of dry-etching techniques for gallium nitride (GaN) material, the inductively coupled plasma (ICP) etching process was considered to be the most effective process in the commercialized blue light emitting diodes (LED). The purpose of our study is to investigate the effect of etching parameters such as different etching gas, gas flow rate, ICP plasma power, chamber pressure and radio-frequency (RF) power on the etching rate and surface characteristic of GaN thin films that was etched by the ICP process. The results showed that by adding Ar gas to Cl2 etching gas would increase the effect of ion bombardment and improve the sharpness of GaN sidewall. However, as the Ar flow rate reach too high, it would dilute the radical concentration that decreased the etching rate and obtained a etched surface with poor surface roughness. The Increasing of RF power and ICP plasma concentration can help to elevate the reaction and etching rate due to the increase in the concentration and energy of reaction ions. On the other hand, as the power became too high, it can induce the surface defects and decrease the etching rate. Low chamber pressure increased the etching rate by enhancing the exchanging of reaction gas and vaporized products, thus obtained better etched surface and more vertical sidewall. However, if the chamber pressure became too low, the surface roughness and defects was increased due to the severe ion bombardment.