A study of one-dimensional field emission nano-materials
碩士 === 大同大學 === 光電工程研究所 === 89 === Our purpose is to fabricate and study the field emission nano-materials. We successful fabricate Si nanowires encolsed in amorphous carbon (SiNWs@a-C) by using hight temperature furnace as post-annealing. The field emission characteristic of SiNWs@a-C de...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65401831035706616467 |
| Summary: | 碩士 === 大同大學 === 光電工程研究所 === 89 === Our purpose is to fabricate and study the field emission nano-materials. We successful fabricate Si nanowires encolsed in amorphous carbon (SiNWs@a-C) by using hight temperature furnace as post-annealing. The field emission characteristic of SiNWs@a-C depends on the length of SiCNWs@a-C, and the volume ratio of a-Si nanowires to a-carbon. A new method of SiC nanorods growth by a rapid thermal processing (RTP) of amorphous carbon film is carried out. The length and number density of SiC nanorods can be changed by different treated temperature or annealing time. According to the Arrhenius equation, the activation energy of the nucleation and growth for SiC nanorods can be calculated respectively. The field emission characteristic of SiC nanorod depends on the length of SiC nanorod. The longer SiC nanorod has larger field emission current density. We also use the SiC nanorod as the field emission material to fabricate the triode-type field emitter device by IC manufacture technology.
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