X-ray Absorption Spectroscopy of N-doped diamond films

• Main Authors: Yu-Di Chang, 張幼弟
• Other Authors: Way-Faung Pong
• Format: Others
• Language: zh-TW
• Published: 2001
• Online Access: http://ndltd.ncl.edu.tw/handle/00254842701071269410

碩士 === 淡江大學 === 物理學系 === 89 === Nitrogen-doped diamond films were deposited on silicon substrate using a Microwave plasma-enhanced chemical vapor deposition (MPECVD) method. Scanning electron microscopy (SEM), X-Ray Diffraction (XRD), X-ray absorption near-edge structure (XANES) measurements have been performed to study the morphology, chemical structure and bonding configuration for a variety of Nitrogen-doped and undoped diamond films. The C K-edge XANES spectra of N-doped diamonds resemble that of the undoped diamond regardless of the N concentration, which suggests that the overall bonding configuration of the C atom is unaltered. N impurities are found to reduce the intensities of both the sp2 - and sp3 - bond derived resonance features in the XANES spectra. Comparing with the results of recent studies in Boron-doped diamond, it shows the different changes in bounding configuration.