Characterization of ordered structure for AlInP2 and GaInP2
博士 === 國立臺灣科技大學 === 電子工程系 === 89 === We have characterized the AlInP2 and GaInP2 epilayers that exhibit different degree of ordering by using the polarization dependent piezoreflectance (PzR) measurements in the temperature range between 25 and 500 K. AlInP2 is an indirect wide band-gap semiconducto...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2001
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Online Access: | http://ndltd.ncl.edu.tw/handle/74741525848636086152 |