Synthesis of 3C-SiC Films on Si(111) by SiH4/C2H2/H2 - CVD Reactiln System
碩士 === 國立臺灣科技大學 === 化學工程系 === 89 === Stoichiometric SiC films on Si(111) have been synthesized using the SiH4/C2H2/H2-CVD reaction system. The successive two step CVD, carbonization of Si substrate followed by SiC film growth, is utilized for synthesizing 3C-SiC films. For carbonization process, the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24826050876258720953 |