The Analysis of Electrical Characteristics and Roughness Effects of Metal-Oxide-Silicon(MOS) Tunneling Diode
碩士 === 國立臺灣大學 === 電機工程學研究所 === 89 === Abstract In this thesis we report the electrical characterization and its roughness effects of metal-oxide- semiconductor (MOS) tunneling diodes. With the device scaling down, thin gate oxide thickness are needed to be 2nm below. But the tu...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51255572237905961257 |