A Novel Low-Voltage Content-Addressable-Memory Cell with a Fast Tag-Compare Capability Using PD SOI CMOS Dynamic-Threshold Voltage MOS Techniques
碩士 === 國立臺灣大學 === 電機工程學研究所 === 89 === This thesis reports two low-voltage Content-Addressable- Memory (CAM) Cells with a fast tag-compare capability using partially depleted (PD) SOI CMOS dynamic-threshold (DTMOS) techniques. In chapter 2, this thesis reports a novel low-voltag...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/36072672751535778328 |