The Electrical Properties of Tantalum Oxide (Ta2O5) Thin Films for Gate Dielectric Applications in Metal-Oxide-Semiconductor Field Effect Transistors
博士 === 國立清華大學 === 電子工程研究所 === 89 === When the thickness of MOSFET gate dielectric is scaled below 1.5 nm, the gate leakage current level will be unacceptable due to direct tunneling current. High dielectric constant materials can potentially be used as gate dielectrics for future deep submicrometer...
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| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58227377662900660363 |