Study on Read Current of Bi-directional Tunneling Program/Erase NOR-type (BiNOR) Flash Memory

碩士 === 國立清華大學 === 電子工程研究所 === 89 === Among the flash memories developed recently, BiNOR flash memory enlists several unique and promising features. In particular, its read current exhibit fairly different characteristics from that of the conventional flash memories. In this dissertation,...

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Bibliographic Details
Main Authors: Fu-Yuan Chen, 陳福元
Other Authors: Ching-Hsiang Hsu
Format: Others
Language:zh-TW
Published: 2001
Online Access:http://ndltd.ncl.edu.tw/handle/94143837928388636979

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