Study on Read Current of Bi-directional Tunneling Program/Erase NOR-type (BiNOR) Flash Memory

• Main Authors: Fu-Yuan Chen, 陳福元
• Other Authors: Ching-Hsiang Hsu
• Format: Others
• Language: zh-TW
• Published: 2001
• Online Access: http://ndltd.ncl.edu.tw/handle/94143837928388636979

碩士 === 國立清華大學 === 電子工程研究所 === 89 === Among the flash memories developed recently, BiNOR flash memory enlists several unique and promising features. In particular, its read current exhibit fairly different characteristics from that of the conventional flash memories. In this dissertation, the impact of the N field oxide isolation inherent to its structure to the read characteristics is analyzed and discussed. A novel trench source line method is proposed to further increase its read current. This method not only has many advantages of process flexibility and simplicity, but also provides enhance read current compared with the original structure. Consequently, the trench source line is demonstrated as a feasible method for BiNOR to implement fast random access operation in the future.