The study of a low voltage CMOS RF mixer using double gate transistor

• Main Authors: Yu-Jen Chang, 張毓仁
• Other Authors: Chen-Hsin Lien
• Format: Others
• Language: zh-TW
• Published: 2001
• Online Access: http://ndltd.ncl.edu.tw/handle/93753756445059564961

碩士 === 國立清華大學 === 電子工程研究所 === 89 === With the growth of communication, there is a big market coming by, and lots of papers have been published recently. One of the important issue is the System on one chip (SOC) .That is integration of the frond-end circuit and the back-end ciriut into a single one chip. Traditionally,we use GaAs,Bicmos,and SiGe to implement frond-end circuit with all these devices have better performance for RF circuit inherently.Not long ago tsmc has just announced its 0.13 um and 0.18 um process ‘s device performance ft being tens of giga Hertz.So the dream of SOC for RF circuit is possible. Moreover, one important block of the frond-end circuit is mixer,that performs the conversion of frequency.This paper will focus on the topic of mixer. Scaling of MOSFET device incurs SCE (short channel effect).SOI device is thus proposed and proved having a better immunity to SCE.DGMOSFET(double gate MOSFET) is one envolution of SOI MOSFET.In this paper we propose a Gilbert mixer core using DGMOSFET to operate a low voltage supply 0.75v and 0.8v.The implementation is estimated by calculation and simulation in terms of the paper proposed 1983[22] and BSIMSOI PD2.2.2 model[23][24].We believe that double gate can also be used for the multiplier proposed in 1998 by Shuo-Yuan Hsiao and Professor Chung-Yu Wu[1]. Chap 1 briefly introduce receiver structure.Chap 2 introduce basic merits of mixer and some conventional CMOS mixers. A mixer with tsmc 0.35um process having high linearity,say IIP3 (Input interception point == 10dbm),but a poor mixer core conversion gain( - 8db) is proposed, too.Chap 3 introduce the DGMOSFET Gilbert mixer core .Chap 4 is conclusion and a list of recent published mixers.