The Effects of Ti Capping Layers on the Formation and Thermal Stability of Nickel Silicides
碩士 === 國立清華大學 === 材料科學工程學系 === 89 === Ni silicide is an attractive candidate to replace Ti silicide due to its low resistivity and the absence of fine line effect. The appropriate improvement on thermal stability of NiSi thin films is a very important issue for using NiSi in the fabricati...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29104389311179268256 |