A study of copper process in ultra large scale integrated circuit using plasma immersion ion implantation and electroless copper system

碩士 === 國立清華大學 === 材料科學工程學系 === 89 === in the experiment,our purpose was to grow copper thin films using plasma immersion ion implantation and electroless copper systems.First,we implanted catalyst layer ,such as Pd,Cu etc, using plasma immersion ion implantation in large areas uniformly t...

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Bibliographic Details
Main Authors:	Wei Jen Hsieh, 謝維仁
Other Authors:	Han C. Shih
Format:	Others
Language:	zh-TW
Published:	2001
Online Access:	http://ndltd.ncl.edu.tw/handle/18230345920435302614

id	ndltd-TW-089NTHU0159023
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spelling	ndltd-TW-089NTHU01590232016-01-29T04:33:41Z http://ndltd.ncl.edu.tw/handle/18230345920435302614 A study of copper process in ultra large scale integrated circuit using plasma immersion ion implantation and electroless copper system 電漿離子佈植及無電鍍系統應用於超大型積體電路之銅製程研究 Wei Jen Hsieh 謝維仁碩士國立清華大學材料科學工程學系 89 in the experiment,our purpose was to grow copper thin films using plasma immersion ion implantation and electroless copper systems.First,we implanted catalyst layer ,such as Pd,Cu etc, using plasma immersion ion implantation in large areas uniformly to enhance adhesion.In the experiments,according to the results of changing different parameters and annealing at different temperature to influence Cu thin films properties, define the correct Cu growth mechanism.Analyze the relation between Cu thin films and TaN layer using different kinds of analysis tools,such as AES,XRD etc.The best gap filling can fill the trenches and vias which aspect ratio is 1:7 and reveal good step coverage. Han C. Shih 施漢章 2001 學位論文 ; thesis 96 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立清華大學 === 材料科學工程學系 === 89 === in the experiment,our purpose was to grow copper thin films using plasma immersion ion implantation and electroless copper systems.First,we implanted catalyst layer ,such as Pd,Cu etc, using plasma immersion ion implantation in large areas uniformly to enhance adhesion.In the experiments,according to the results of changing different parameters and annealing at different temperature to influence Cu thin films properties, define the correct Cu growth mechanism.Analyze the relation between Cu thin films and TaN layer using different kinds of analysis tools,such as AES,XRD etc.The best gap filling can fill the trenches and vias which aspect ratio is 1:7 and reveal good step coverage.
author2	Han C. Shih
author_facet	Han C. Shih Wei Jen Hsieh 謝維仁
author	Wei Jen Hsieh 謝維仁
spellingShingle	Wei Jen Hsieh 謝維仁 A study of copper process in ultra large scale integrated circuit using plasma immersion ion implantation and electroless copper system
author_sort	Wei Jen Hsieh
title	A study of copper process in ultra large scale integrated circuit using plasma immersion ion implantation and electroless copper system
title_short	A study of copper process in ultra large scale integrated circuit using plasma immersion ion implantation and electroless copper system
title_full	A study of copper process in ultra large scale integrated circuit using plasma immersion ion implantation and electroless copper system
title_fullStr	A study of copper process in ultra large scale integrated circuit using plasma immersion ion implantation and electroless copper system
title_full_unstemmed	A study of copper process in ultra large scale integrated circuit using plasma immersion ion implantation and electroless copper system
title_sort	study of copper process in ultra large scale integrated circuit using plasma immersion ion implantation and electroless copper system
publishDate	2001
url	http://ndltd.ncl.edu.tw/handle/18230345920435302614
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A study of copper process in ultra large scale integrated circuit using plasma immersion ion implantation and electroless copper system

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