| Summary: | 碩士 === 國立清華大學 === 化學系 === 89 === As IC technology moves into the deep submicrometer regime in high performance ULSI circuits, it is required to decrease the metal pitch and to increase the number of metal layers for interconnect to accommodate the increased packing density and functional complexity. But the signal propagation delay. Use of low dielectric constant material as the intermetal dielectric (IMD) results in low inter-line capacitance and therefore high performance in speed, low power dissipation, and low cross-talk noise. During various low dielectric materials, porous silica film is one of the possible candidates with an inherent low dielectric constant. In this thesis, the low dielectric constant mesoporous silica films were prepared by condensation of a silicate network around surfactant micellar structures. And the intrinsic properties such as fundamental physical, electrical, reliability and thermal stability of the spin on glass (SOG) have been investigated. We also study the properties of the SOG film with various plasma and treatments. An inherent low dielectric constant of 1.42-2.5 is achieved for about 50%-75% porosity of the porous silica film and the leakage current density hold at a level of 10-6-10-8 A/cm2 at 2 MV/cm electric field strength depended on processing condition, film synthesis and dehydroxylation conditions of the mesoporous silica films. This molecularly templated synthesis approach allows rational control of the porosity, pore size and shape, and film texture and thickness, and results in good mechanical properties in the film (with elastic modulus of ~4.0 GPa). An in this study we also applying the post-plasma treatment, however, both leakage current density and dielectric constant are decreased compared to untreated and unmodified porous silica film.
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