Investigation ofδ-dopedⅢ-Ⅴ Semiconductor Quantum Well Using Photoluminescence

碩士 === 國立中山大學 === 物理學系研究所 === 89 === We measure the energy gap of two-dimensional electron gas in AlAs0.56Sb0.44/Ga0.47In0.53As at low temperature by photoluminescence measurement. We intend to observe the intersubband transition in these samples, especially the first and second subband. We have dis...

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Bibliographic Details
Main Authors: Jeson Hong, 洪健翔
Other Authors: Ikai Lo
Format: Others
Language:zh-TW
Published: 2001
Online Access:http://ndltd.ncl.edu.tw/handle/41808844573411495257

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