Characterization of Sputtered ZrN Diffusion Barrier
碩士 === 國立中山大學 === 材料科學研究所 === 89 === Abstract Recently Cu has been used as a replacement of Al in microelectronics industry to its lower electrical resistivity and higher electromigration resistance than aluminum. It is essential to have high performance diffusion barrier to suppress the diffusion...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99613260353548185199 |
| Summary: | 碩士 === 國立中山大學 === 材料科學研究所 === 89 === Abstract
Recently Cu has been used as a replacement of Al in microelectronics industry to its lower electrical resistivity and higher electromigration resistance than aluminum. It is essential to have high performance diffusion barrier to suppress the diffusion between Cu and Si . In this experiment ZrN was investigated as a possible diffusion barrier. All coatings were deposited by RF magnetron reactive sputtering system. The growth of ZrN has been evaluted at different vacuum condition、RF power、growth time、N2 flow rate Ar flow rate and Zr or ZrN target. The thin films were then annealed at temperatures from 450 ℃ to 700 ℃ for 30 min to study its durability. In this work XRD was used to study the thin film structure, SEM and TEM study the microstructures and AFM to study the surface roughness . The film’s resistivity was measured as a function of N2 flow rate and annealing temperature by four point probe .
For pure Zr film Cu3Si phase has formed after annealing at 550 ℃ for 30 min . As to ZrN film, only CuZr2 is present after annealing at 650 ℃ for 30 min indicating the diffusion barrier is still effective. After annealing at 700 ℃ for 30 min, Cu3Si was detected indicating the failure of the diffusion barrier. Results up to now suggest that ZrN layer can be a successful candidate as a diffusion barrier between Cu and Si.
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