Characterization of Sputtered ZrN Diffusion Barrier
碩士 === 國立中山大學 === 材料科學研究所 === 89 === Abstract Recently Cu has been used as a replacement of Al in microelectronics industry to its lower electrical resistivity and higher electromigration resistance than aluminum. It is essential to have high performance diffusion barrier to suppress the diffusion...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/99613260353548185199 |