| Summary: | 碩士 === 國立中央大學 === 電機工程研究所 === 89 === First, a BJT compatible process were used to fabricate an amorphous/crystalline Si separated absorption multiplication avalanche photodiode (SAM-APD) in this study. The performance and process parameters of the designed SAM-APD were simulated by using the MEDICI and TSUPREM-4. Eight levels of mask were needed to fabricate the device and the finished devices had rather poor characteristics, such as low optical gain and photocurrent, due to process complexity. Further efforts in device processings are needed to verify the performances of designed SAM-APD.
Then three kinds of amorphous separated absorption multiplication superlattice avalamche photodiode (SAM-SAPD), each with additional p-n-a-SiC, p-i-n-a-SiC, or p-i(a-SiC)-i-n(a-Si) amorphous layers in substage of superlattice (SL), had been designed and fabricated successfully. These device had rather high optical gain, and the one with additional p-i(a-SiC)-i-n(a-Si) amorphous layers in substage of SL had the highest optical gain. The results of this study indicated that using high electric-field and conduction band-edge discontinuity in multiplication region of SAM-SAPD would improve its performance.
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