Studies on Reducing Leakage Current And Increasing Breakdown Voltage of Large-Area Silicon Detector
碩士 === 國立中央大學 === 電機工程研究所 === 89 === In this thesis, techniques that could be used to reduce the leakage current and increase the breakdown voltage of the large-area single-sided silicon detector p+-i-n+ had been investigated. Five different processes had been used to fabricate...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20672791239007941701 |