Characterization of AlxGa1-xN films grown by metalorgainc chemical vapor deposition
碩士 === 國立交通大學 === 電子物理系 === 89 === We have studied the electrical properties of a series of AlGaN films grown by metalorgainc chemical vapor deposition (MOCVD), of which the flow rate of TMGa and TMAl were maintained at constants while that of ammonia (NH3) were varied during the sample p...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/53689049165577466927 |