Impacts of Soft Breakdown on Deep Sub-Micron n-Channel MOSFETs
碩士 === 國立交通大學 === 電子工程系 === 89 === The impacts of soft-breakdown (SBD) on the characteristics of deep sub-micron NMOSFETs were investigated. It is shown that the BD location plays a crucial role in the post-BD switching function of the device. When BD occurs at the channel, the turn-on be...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18272830113583429343 |