Impacts of Soft Breakdown on Deep Sub-Micron n-Channel MOSFETs
碩士 === 國立交通大學 === 電子工程系 === 89 === The impacts of soft-breakdown (SBD) on the characteristics of deep sub-micron NMOSFETs were investigated. It is shown that the BD location plays a crucial role in the post-BD switching function of the device. When BD occurs at the channel, the turn-on be...
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| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18272830113583429343 |
| Summary: | 碩士 === 國立交通大學 === 電子工程系 === 89 === The impacts of soft-breakdown (SBD) on the characteristics of deep sub-micron NMOSFETs were investigated. It is shown that the BD location plays a crucial role in the post-BD switching function of the device. When BD occurs at the channel, the turn-on behavior of the drain current would not be significantly affected, which is in strong contrast to the case of BD at the drain. Nevertheless, significant increase in gate and drain currents is observed in the off-state when the gate voltage is more negative then —1.5 V. Its origin is identified to be due to the action of two parasitic bipolar transistors formed after the occurrence of SBD at the channel.
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