電漿輔助化學氣相沉積二氧化矽薄膜之內應力分析
碩士 === 國立成功大學 === 機械工程學系 === 89 === Plasma enhanced chemical vapor deposition (PECVD) is an important thin film process for the fabrication of microelectronic devices and microelectromechanical systems (MEMS). Because PECVD is facilitated by plasma rather than by high temperature, it is widely used...
Main Author: | 林士淵 |
---|---|
Other Authors: | 陳國聲 |
Format: | Others |
Language: | zh-TW |
Published: |
2001
|
Online Access: | http://ndltd.ncl.edu.tw/handle/96357105447165492883 |
Similar Items
-
二氧化碳雷射輔助電漿激發式化學氣相沈積非晶形二氧化矽薄膜
by: 邱欣慶
Published: (2000) -
電漿化學氣相沉積poly-l-lysine薄膜之研究
by: LU CHAO I, et al.
Published: (2003) -
二氧化碳雷射輔助電漿激發式化學氣相沉積氮化矽
by: 趙國駿
Published: (1999) -
電漿化學氣相沉積法成長氮化鎵
by: CHEN,JIAN-CAI, et al.
Published: (1990) -
以四氯化鈦的電漿化學氣相沉積氧化鈦薄膜
by: XU,SHAO-DA, et al.