Transition Metal Carbides as Diffusion Barriers in Copper Metallization for ULSI Technology
博士 === 國立成功大學 === 電機工程學系 === 89 === Cu is now being used in ULSI metallization below 0.18 µm as a replacement for Al due to its higher conductivity and higher resistance to electromigration as compared to Al or Al alloy. However, Cu is liable to diffuse into Si and SiO2 and then reacts with Si to fo...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72303185571863420578 |