CoTiO3 High-k Dielectric for Nonvolatile Memory

碩士 === 國立中興大學 === 電機工程學系 === 89 === In this thesis, for the first time we have fabricated CoTiO3 high-k material as the interpoly dielectrics for nonvolatile memory application. We found that the dielectric constant with the barrier layer can be reached as high as 40. CoTiO3 thin film were thermally...

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Bibliographic Details
Main Authors: Hsu,Ting-wei, 許庭瑋
Other Authors: 貢中元
Format: Others
Language:zh-TW
Published: 2001
Online Access:http://ndltd.ncl.edu.tw/handle/06246768756251195759

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