| Summary: | 碩士 === 義守大學 === 材料科學與工程學系 === 89 === Metallization of oxide surfaces using aluminum（Al）or gold（Au）is a key process in the fabrication or packaging of electronic and optoelectronic devices. Since these metal thin films provide the electrical and mechanical connection, the adhesion between metal thin films and oxide layer is one of the main concerns in the processing. Higher adhesion strength of metal thin film to oxide surface normally leads to high mechanical reliability of devices. Al thin film with Cr interlayer has been used as a composite layer to metallize ITO-coated glass. The top Al layer provides bondability and electrical conductivity, while the Cr layer is inserted to provide adhesion strength . From a previous study, it is well known that the adhesion between Al/Cr and ITO glass needs to be increased in order to sustain some thermal and mechanical tests.
In order to enhance the adhesion between the Al/Cr and ITO glass, oxygen interface doping at the Cr - ITO interface has been proposed in this study. Various deposition parameters（bias, oxygen flow rate）have been used to determine the optimal condition for thin film deposition. From the results of compressive stress and crystalline size, they indicate the optimal bias voltages are in the range of —40 to —80V. The maximum improvement in adhesion strength can be obtained as the oxygen flow rate at 6 sccm. The structure and morphology of this change can be studied by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES).
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