An Improved Thermal Effect of Power IGBT Devices Using Response Surface Methods and Optimum Design
碩士 === 逢甲大學 === 電機工程學系 === 89 === The Insulated Gate Bipolar Transistor (IGBT) is applicative in the power electronic applications because it has advantages of the high speed and high input impedance of MOSFETs, and low saturated voltage of BJTs. IGBT may be damaged by the high temperatur...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96923184262922107019 |