| Summary: | 碩士 === 逢甲大學 === 電機工程學系 === 89 === In the thesis, we present RF CMOS active and passive device modeling and broadband active inductor integrated circuit design. The geometry aspect influence of a spiral inductor on inductance and Q-factor was studied. The methodologies to improve Q-factor were also investigated. RF CMOS integrated circuits were designed using extracted device modeling. In addition, we developed a novel cascode cross-couple negative resistance circuit and applied it to active inductor. The Q-factor of the broadband active inductor can easily attain 10000 by tuning bias voltage of negative resistance circuit. The inductance values of the active inductor can be tuned by scaling transistor size. At 2.5-V supply voltage, the active inductor exhibited excellent performance. The active inductor can be applied to the next generation IC process. Finally, we complete a simple, high Q-factor, high-performance, tunable active filter using the active inductor.
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