Characterization of rare-earth-treatedInGaAsP Layers
碩士 === 中原大學 === 應用物理研究所 === 89 === ABSTRACT The rare-earth (RE) doped InGaAsP epitaxial layers, lattice-matched to InP, were prepared by the liquid phase epitaxy system. In this work, we investigate the influence of the rare-earth elements doped into InGaAsP layers by the photoluminescence(PL), the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/45911767529130595706 |