| Summary: | 碩士 === 中原大學 === 應用物理研究所 === 89 === ABSTRACT
The rare-earth (RE) doped InGaAsP epitaxial layers, lattice-matched to InP, were prepared by the liquid phase epitaxy system. In this work, we investigate the influence of the rare-earth elements doped into InGaAsP layers by the photoluminescence(PL), the photoconductivity(PC), the persistent photoconductivity(PPC) and the Raman scattering measurements.
The full width at half maximum (FWHM) of photoluminescence spectrum of Ho-doped InGaAsP layers exhibit, narrower than that of the undoped layer. Photoconductivity spectrum of InGaAsP layers doped with Ho has a larger slope than that of the undoped layer. From the result, of the PL and the PC, the rare earth elements are acting as an efficient gettering agent to reduce the free-carrier concentration and the shallow impurities. On the other hand, the Raman scattering measurement shows that the alloy disorder has not changed by the doping of the rare-earth (RE) elements.
In addition, by PPC measurements, we can obtain the electron capture energy of the defect-centers of the undoped epitaxial layers, and that of the Ho-doped epitaxial layers.
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