Optical studies in asymmetric semiconductor microcavities

碩士 === 中原大學 === 應用物理研究所 === 89 === The reflectivity and photoluminescence of an asymmetric microcavity by changing the temperature and the angle of detection are investigated. The asymmetric microcavity studied in this work were consists of 27 pairs GaAs/AlAs Bragg mirror and an absorbing cavity lay...

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Bibliographic Details
Main Authors: Ju-Ya Chang, 張儒雅
Other Authors: J.L. Shen
Format: Others
Language:zh-TW
Published: 2001
Online Access:http://ndltd.ncl.edu.tw/handle/58366767261157094047
Description
Summary:碩士 === 中原大學 === 應用物理研究所 === 89 === The reflectivity and photoluminescence of an asymmetric microcavity by changing the temperature and the angle of detection are investigated. The asymmetric microcavity studied in this work were consists of 27 pairs GaAs/AlAs Bragg mirror and an absorbing cavity layer with InGaAs/InGaAsP multiple quantum wells. The studies are divided into two subjects. First, we try to analyze the temperature-dependent reflectivity in normal direction using the transfer matrix method. With the optical parameter from our experiments and the literature, the calculated reflectivity spectra are in good agreement with our experiments. We also obtained the absorption coefficient of the cavity layer from the photoluminescence studies in the room-temperature. In addition, we studied the photoluminescence for our asymmetric microcavity in different detecting configuration. The vacuum Rabi-splitting, the intensity enhancement of the cavity mode, and motional narrowing are demonstrated in the temperature dependent photoluminescence,providing the evidence of the strong coupling effects of photons and excitons. Hence we prove that the polaritons are formed in the nearly in-plane direction for the first time.